JPH0171899U - - Google Patents

Info

Publication number
JPH0171899U
JPH0171899U JP1987168119U JP16811987U JPH0171899U JP H0171899 U JPH0171899 U JP H0171899U JP 1987168119 U JP1987168119 U JP 1987168119U JP 16811987 U JP16811987 U JP 16811987U JP H0171899 U JPH0171899 U JP H0171899U
Authority
JP
Japan
Prior art keywords
electrode
substrate
insulating layer
light emitting
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987168119U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987168119U priority Critical patent/JPH0171899U/ja
Publication of JPH0171899U publication Critical patent/JPH0171899U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
JP1987168119U 1987-11-02 1987-11-02 Pending JPH0171899U (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987168119U JPH0171899U (en]) 1987-11-02 1987-11-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987168119U JPH0171899U (en]) 1987-11-02 1987-11-02

Publications (1)

Publication Number Publication Date
JPH0171899U true JPH0171899U (en]) 1989-05-15

Family

ID=31457020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987168119U Pending JPH0171899U (en]) 1987-11-02 1987-11-02

Country Status (1)

Country Link
JP (1) JPH0171899U (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036384A (ja) * 1998-07-17 2000-02-02 Nec Corp 有機薄膜ｅｌデバイスの製造方法
US6939189B2 (en) 1999-05-14 2005-09-06 Ifire Technology Corp. Method of forming a patterned phosphor structure for an electroluminescent laminate
US8049419B2 (en) 1999-12-15 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with suppressed influence of voltage drop

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036384A (ja) * 1998-07-17 2000-02-02 Nec Corp 有機薄膜ｅｌデバイスの製造方法
US6939189B2 (en) 1999-05-14 2005-09-06 Ifire Technology Corp. Method of forming a patterned phosphor structure for an electroluminescent laminate
US7427422B2 (en) 1999-05-14 2008-09-23 Ifire Technology Corp. Method of forming a thick film dielectric layer in an electroluminescent laminate
US7586256B2 (en) 1999-05-14 2009-09-08 Ifire Ip Corporation Combined substrate and dielectric layer component for use in an electroluminescent laminate
US9368517B2 (en) 1999-12-05 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including bonding portion with first and second sealing materials
US8049419B2 (en) 1999-12-15 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with suppressed influence of voltage drop
JP2012054250A (ja) * 1999-12-15 2012-03-15 Semiconductor Energy Lab Co Ltd 発光装置
US8319424B2 (en) 1999-12-15 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8716933B2 (en) 1999-12-15 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including light emitting element

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